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Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
100
70
60
50
80
40
60
Package Limited
30
40
20
20
0
10
0
0
25
50
75
100
125
150
0
25
50 75 100
125
150
T C - Case Temperature ( ° C)
Current Derating*
T C - Case Temperature ( ° C)
Power, Junction-to-Case
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
N otes:
t 1
t 2
0.1
0.01
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 63 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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